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High frequency MOSFET gate drivers technologies and applications [electronic resource]
Zhang, Zhiliang
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| 자료유형 | E-BOOK |
|---|---|
| 서명/저자사항 | High frequency MOSFET gate drivers [electronic resource]: technologies and applications/ ZhiLiang Zhang and Yan-Fei Liu. |
| 개인저자 | Zhang, Zhiliang,author, Liu, Yan-Fei,author, |
| 발행사항 | London: The Institution of Engineering and Technology, 2017. |
| 형태사항 | 1 online resource (xv, 279 pages). |
| 총서사항 | Materials, Circuits and Devices Ser. |
| 기타형태 저록 | Print version: Zhang, ZhiLiang. High frequency MOSFET gate drivers. London : The Institution of Engineering and Technology, 2017 9781785613654 |
| ISBN | 9781785613661 1785613669 |
| 서지주기 | Includes bibliographical references and index. |
| 내용주기 | "Contents"; "Authors"; biographies"; "Preface"; "List of symbols"; "1. Introduction"; "1.1 Introduction"; "1.2 Voltage regulator applications"; "1.3 Voltage source gate driver and high-frequency-dependent loss"; "1.3.1 Switching loss"; "1.3.2 Body diode conduction loss"; "1.3.3 Reverse recovery loss"; "1.3.4 Gate drive loss"; "1.4 Summary"; "References"; "2. Fundamentals of current source driver"; "2.1 Resonant gate drivers"; "2.2 Concept of current source driver"; "2.3 A practical and accurate switching loss model"; "2.3.1 Introduction" "2.3.2 Impact of parasitic inductance and load current"; "2.3.3 Proposed switching loss model"; "2.3.4 Turn-on switching loss model"; "2.3.5 Turn-off switching loss model"; "2.3.6 Voltage source drive model verification"; "2.3.7 Experimental validation of the voltage source drive model"; "2.4 Summary"; "References"; "3. Continuous current source driver"; "3.1 Two-channel low-side continuous current source drivers"; "3.1.1 Operating principle"; "3.1.2 Loss comparison"; "3.1.3 Advantages of the proposed current source driver"; "3.1.4 Applications" "3.1.5 Experimental results"; "3.2 High-side and low-side continuous current source drivers"; "3.2.1 Operating principle of proposed current source drivers"; "3.2.2 Advantages""; ""3.2.3 Loss analysis"; "3.2.4 Experimental results"; "3.3 Accurate switching loss model with current source drivers"; "3.3.1 Proposed MOSFET loss model with current source resonant driver"; "3.3.2 Analytical modeling and simulation results"; "3.3.3 Proposed optimal design with the accurate switching loss model"; "3.3.4 Experimental verification and discussion" "3.4 High-side and low-side current source drivers"; "3.4.1 Problem of high-side and low-side current source drivers"; "3.4.2 Proposed decoupled high-side and low-side current source drivers"; "3.4.3 New current-source gate driver with integrated magnetics"; "3.4.4 Experimental results and discussion"; "3.5 Summary"; "References"; "4. Discontinuous current source drivers"; "4.1 Discontinuous current source driver"; "4.1.1 Proposed low-side discontinuous CSD"; "4.1.2 Driver loss analysis"; "4.1.3 CSD design procedure"; "4.1.4 Design example" "4.1.5 Experimental results"; "4.2 High-side discontinuous CSD"; "4.2.1 Proposed CSD for synchronous buck converter and operation""; ""4.2.2 Design example""; ""4.2.3 Experimental results""; "4.3 Discontinuous CSD with reduced inductance"; "4.3.1 Proposed CSD and principle of operation"; "4.3.2 Proposed high-side CSD and hybrid gate-drive scheme"; "4.3.3 Experimental results"; "4.4 Current diversion"; "4.4.1 Introduction"; "4.4.2 Proposed switching loss model considering current diversion"; "4.4.3 Experimental results and discussions"; "4.5 Summary"; "References" "5. Adaptive current source drivers" |
| 요약 | This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. |
| 일반주제명 | Switching power supplies. Metal oxide semiconductor field-effect transistors. TECHNOLOGY & ENGINEERING --Mechanical. Metal oxide semiconductor field-effect transistors. Switching power supplies. constant current sources. driver circuits. gallium compounds. HEMT circuits. insulated gate bipolar transistors. power MOSFET. silicon compounds. switching convertors. |
| 언어 | 영어 |
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